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Globalfoundries半导体制造工艺

Analog

0.13um, High Performance Dual Gate
0.13um, Low Power Dual Gate
0.13um, Low Voltage Dual Gate
0.13um, Generic Dual Gate
0.18um, 1.8V / 3.3V CB
0.18um, 1.8V / 3.3V IC
0.18um, 1.8V / 6V ULL
0.22um, 2.5V / 3.3V Dual Gate
0.22um, 2.5V / 5V Dual Gate
0.25um, 2.5V / 3.3V Dual Gate
0.35um, 3.3V Salicide
0.35um, 3.3V / 5V Salicide
0.60um，5V Salicide

Logic

0.13um, High Performance Dual Gate
0.13um, Low Power Dual Gate
0.13um, Low Voltage Dual Gate
0.13um, Generic Dual Gate
0.18um, 1.8V / 3.3V CB
0.18um, 1.8V / 3.3V IC
0.18um, 1.8V / 6V ULL
0.25um, 2.5V / 3.3V Dual Gate
0.25um, 2.5V / 5V Dual Gate
0.35um, 3.3V Salicide
0.35um, 3.3V / 5V Salicide
0.50um, 5V
0.50um, 3.3V

NVM

0.13um, OTP
0.18um, 1.8V / 3.3V SONOS eFLASH IB
0.18um, 1.8V / 3.3V OTP CB
0.18um, 1.8V / 3.3V OTP IC
0.25um, 2.5V / 3.3V Dual Gate OTP
0.25um, 2.5V / 5V Dual Gate OTP
0.35um, EEPROM
0.35um, OTP
0.60um, EEPROM
0.80um, EEPROM

RF

0.13um, Low Power Dual Gate
0.13um, Generic Dual Gate
0.18um, 1.8V / 3.3V CB
0.25um, 2.5V / 3.3V Dual Gate
0.35um, 3.3V Salicide

HV

0.18um, 1.8V / 6V ULL
0.18um, 1.8V / 6V / 16V ULL
0.18um, 1.8V / 6V / 20V ULL
0.18um, 1.8V / 6V / 32V ULL
0.35um, 3.3V / 13.5V Polycide
0.35um, 3.3V / 18V Salicide
0.35um, 3.3V / ±9V Salicide

SiGe BiCMOS

0.18um, 1.8V / 3.3V CB
0.35um, 3.3V / 5V (MOS)

BiCMOS

0.60um, 5V CMOS / 5V NPN
0.60um, 5V CMOS / 3.3V NPN